Oxide film homogeneity provision on the surface of silicon monocrystal substrates while their thermal oxidation process

Machine-building Engineering and Machine Science

Mechanical and Physico-Technical Processing Technology and Equipment


Аuthors

Kovalev A. A.*, Tischenko L. A.**, Antipin M. A.***, Shakhovtsev M. M.****

Bauman Moscow State Technical University, MSTU, 5, 2-nd Baumanskaya, Moscow, 105005, Russia

*e-mail: kovalevarta@gmail.com
**e-mail: leonid.tichenko@gmail.com
***e-mail: mr.antipin@yandex.ru
****e-mail: medbed96@gmail.com

Abstract

The article deals with the impact of the thermal oxidation process technological parameters, such as the work process temperature and the value of oxidizer reagents consumption, on the oxide film uniformity on the silicon substrate surface. It evaluates the heat-treatment furnace preheating temperature range by modelling in ANSYS with the specified boundary conditions. The homogeneity characteristic, being computed by Min-Max method, was used for homogeneity estimation. The type of silicon wafers under consideration satisfied the number of parameters, such as d = 100 mm, thickness 400 µm, the polished silicon emissivity ε = 0.89, silicon thermal conductivity λ = 31.2 W /(mK), silicon density ρ = 2.33 g / cm3. The preheating temperature range for an atmospheric thermal furnace with a silicon carbide boat is 550–700 °C. Increase in the oxide film distribution homogeneity over the silicon substrates surface due to the uniform distribution of the temperature field was observed as the result of simulation. As a consequence, chemical reactions were close in the intensity of the oxidation processes flow. Experimental validation of the homogeneity increase was obtained due to the thermal furnace boat preheating.

Optimal values of oxidant reagents (O2, H2O) consumption at temperatures of 1100, 1000 and 850 °С in the two-phase heating furnace (heating – dry oxidation, work process – wet oxidation) were obtained experimentally. These values allow producing wafers with high-quality silicon oxide (U < 1%).

The article gives technological recommendations on high-quality oxide film provision on the surface of monocrystal silicon wafers by furnace preheating and maintaining temperature between the thermal oxidizing processes, as well as oxidant reagents consumption values selection, allowing producing wafers with high-quality silicon oxide.

Keywords:

thermal oxidation, silicon substrates, homogeneity

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