Some of the research and development questions of the bonding the SOI structures

Аuthors

Timoshenkov S. P.^1*, Kalugin V. V.^1**, Sokolov L. V.^***, Parfenov N. M.^2****

1. National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, Russia, 124498
2. Moscow Aviation Institute (National Research University), 4, Volokolamskoe shosse, Moscow, А-80, GSP-3, 125993, Russia

*e-mail: spt@miee.ru
**e-mail: viktor118@mail.ru
***e-mail: sokol@niiao.com
****e-mail: pnm334@mai.ru

Abstract

Currently, the manufacturing of the SOI structures is promising for the development of MEMS devices, aviation pressure sensors, as well as the possibility of transition to nanotechnology. The use of SOI allows to reduce the size of elements to 50 nm, well as to ensure full electrical isolation of individual devices on a chip, utilized in on bord aviation MEMS.

Keywords:

bonding technology of structures, aviation MEMS devices.