Basic process operations parameters impact of silicon electronic lens manufacturing and its storage conditions effect on electron beam shape studying
Machine-building Engineering and Machine Science
Mechanical engineering technology
Аuthors*, **, ***
Bauman Moscow State Technical University, MSTU, 5, bldg. 1, 2-nd Baumanskaya str., Moscow, 105005, Russia
Lithographic processing is one of the key operations of technological processes while semiconductor devices' and integrated circuits manufacturing. Its parameters effect strongly the precision of the devices structure creation, and, as a consequence, its output characteristics. Multi beam lithography is implemented in particular. Its technological equipment uses silicon electronic lenses for electron beam control, which electronic and optical parameters affect the accuracy of the manufactured product structure and, as consequence, their output characteristics.
The paper tackles the topical problem of ensuring the specified electro-optical parameters of electrostatic lens (including geometric sectional shape of electron beam) during its production, storage, and transportation, as well as repeatability of these parameters from batch to batch.
The research object of this project is electro-static lens representing silicon plate with a plenty of holes of circular shape. The lens under study is used in technological equipment for multi-beam e-lithography for a powerful beam splitting into a multitude of beams.
The electro-static lens parameters degradation causes in length of time identification, and their elimination technique development are the main tasks of this studies.
In the course of the study, a number of operations and factors that could affect the electro-optical lens parameters was revealed. According to the results of expert evaluation of electronic lens manufacturing technological process, these factors are oxidation and chemical cleaning operations.
The results of various technological operations and factors effect on electro-optical lens parameters variation were presented. While this research a series of experiments was conducted, which considered variation of electro-optical lens parameters in length of time.
The obtained results of the studies allowed revealing possible reasons of electro-static lens parameters degradation in length of time, and developing technological recommendations to prevent this degradation.
The plan of future studies is presented.
Keywords:electron-beam (maskless) lithography, silicon electrostatic lens, electron beam shape
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