The study of silicon substrates pre-treatment technological parameters effect on their surfaces contact angle

Machine-building Engineering and Machine Science

Mechanical Engineering Technology


Аuthors

Kovalev A. A.*, Tischenko L. A.**, Shakhovtsev M. M.***, Gorbatovskaya T. A.****, Vlasov E. Y.*****

Bauman Moscow State Technical University, MSTU, 5, bldg. 1, 2-nd Baumanskaya str., Moscow, 105005, Russia

*e-mail: kovalevarta@gmail.com
**e-mail: leonid.tichenko@gmail.com
***e-mail: medbed96@gmail.com
****e-mail: gta@bmstu.ru
*****e-mail: evgeny_vlasov@yahoo.com

Abstract

The presented article deals with the study of technological parameters (temperature and processing time in hexamethyldisilazane (or HMDS) vapours and dehidration) effect on contact angle of silicon substrates pre-processing, including oxidized ones, to evaluate their hydrophobicity. Contact angle measurements were being performed by method suggested by Bickerman. Those angles values were being obtained indirectly due to the known volume and diameter of a water drop. For non-oxidized silicon substrates technological parameters effect on contact angle consists in the following: the 1.5 degrees increase with 30 seconds increase in time of processig by HMDS vapours, 1.2 degrees increase with 120 seconds increase of dehydration time, 0.6 degrees decrease with 45 degrees increase of processing temperature. For oxidized silicon substrates technological parameters effect on contact angle consists in the following: the 2 degrees increase with 30 seconds increase of processing by HMDS vapours, 0,2 degrees increase with 120 seconds increase of dehydration time, 1 degree decrease with 45 degrees increase of processing temperature. Experimental data analysis was performed by Yates analysis, i.e. full fraction analysis. Based on the obtained results the inference was drawn that increasing time of substrates processing in HMDS takes the strongest effect on their contact angle change. Besides, on substrates temperature increase the contact angle decreases irrespectively to the oxide film presence or absence on their surface. The latter, probably, is associated with the fact that hexamethyldisilazane evaporates from the substrate surface, since their maximum heating temperature was close to the HMDS boiling temperature while this study.

Keywords:

photolithography, adhesion promoter, hexamethyldisilazane (HMDS), dehydration, silicon substrates, hydrophobicity, contact angle

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